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| LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR 1 BASE MMBT2907LT1 MMBT2907ALT1 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V V CEO CBO EBO 2 EMITTER Value 2907 2907A -40 -60 -5.0 -600 -60 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBT2907LT1 = M2B, MMBT2907ALT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) MMBT2907 MMBT2907A Collector-Emitter Breakdown Voltage(I C = -10 Adc, I E = 0) Emitter-Base Breakdown Voltage(I E = -10 Adc, I C = 0) Collector Cutoff Current( V CB = -30Vdc, I BE(OFF) = -0.5Vdc) Collector Cutoff Current ( V CB = -50Vdc, I E = 0) MMBT2907 MMBT2907A ( V CB = -50Vdc, I E = 0, T A =125C ) MMBT2907 MMBT2907A IB (I C = -10 mAdc, I B = 0) V (BR)CEO Vdc -40 -60 -60 -5.0 -- -- -- -- -- -- -- -- -- -- -50 -0.020 -0.010 -20 -10 -50 V (BR)CBO V (BR)EBO I CEX I CBO Vdc Vdc nAdc Adc Base Current( V CE = -30Vdc, V EB(off)= -0.5Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. nAdc O8-1/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = -0.1mAdc, V CE = -10 Vdc) (I C =-1.0mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10Vdc) (I C = -150mAdc, V CE =-10 Vdc)(3) (I C = -500mAdc, V CE =-10 Vdc)(3) Collector-Emitter Saturation Voltage(3) (I C = -150mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) Base-Emitter Saturation Voltage(3) (I C = -150mAdc, I B = -15 mAdc) (I C = -500mAdc, I B = -50 mAdc) 35 75 50 100 75 100 -- 100 30 50 -- -- -- -- -- -- -- 300 -- -- Vdc -0.4 -1.6 Vdc -- -- -1.3 -2.6 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(3),(4) (I C = -50mAdc, V CE= -20Vdc, f = 100MHz) Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = -2.0Vdc, I C = 0, f = 1.0 MHz) f T 200 -- obo -- 8.0 30 MHz pF pF C C ibo -- SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Fall Time Storage Time Turn-Off Time (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) (V CC = -6.0 Vdc, I C = -150 mAdc,I B1 = I B2 = 15 mAdc) t on td tr tf ts t off -- -- -- -- -- -- 45 10 40 30 80 100 ns ns 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 4. f T is defined as the frequency at which |h f e | extrapolates to unity. INPUT Z o = 50 PRF = 150 PPS RISE TIME <2.0 ns P.W. <200 ns 1.0 k 0 -16 V 200 ns 50 INPUT -30 V 200 Z O= 50 PRF = 150 PPS RISE TIME <2.0 ns P.W. < 200 ns 0 -30 V 200 ns Figure 2. Storage and Fall Time Test Circuit 50 1N916 +15 V 1.0 k 1.0 k TO OSCILLOSCOPE RISE TIME < 5.0 ns -6.0 V 37 TO OSCILLOSCOPE RISE TIME < 5.0 ns Figure 1. Delay and Rise Time Test Circuit O8-2/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 TYPICAL CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 V CE = -1.0 V V CE = -10 V T J = 125C 25C 1.0 0.7 0.5 -55C 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C , COLLECTOR CURREN (mA) Figure 3. DC Current Gain -1.0 V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) -0.8 I C = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005-0.01 -0.02 -0.03 -0.05 -0.7 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region 300 200 100 300 V CC = -30 V tr I C /I B = 10 T J = 25C 200 100 V CC = -30 V I C /I B = 10 tf I B1 = I B2 T J = 25C t, TIME (ns) t, TIME (ns) 70 50 30 20 70 50 30 20 10 7.0 t ' s = t s - 1/8 t f t d @ V BE(off) = 0 V 10 7.0 5.0 3.0 2.0 V 5.0 3.0 -5.0-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -5.0-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C , COLLECTOR CURRENT I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn-Off Time O8-3/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE V CE = 10 Vdc, T A = 25C 10 10 f=1.0 kHz 8.0 8.0 NF, NOISE FIGURE (dB) 6.0 I C = -1.0 mA, R S= 430 -500 A, R S= 560 -50 A, R S= 2.7 k -100 A, R S= 1.6 k NF, NOISE FIGURE (dB) 6.0 4.0 4.0 I C = -50A -100 A -500 A -1.0 mA 2.0 RS=OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) R S, SOURCE RESISTANCE ( ) Figure 7. Frequency Effects f T , CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 30 20 400 300 200 Figure 8. Source Resistance Effects C eb C, CAPACITANCE(pF) 10 7.0 5.0 100 80 60 C cb VCE=-20 V T J= 25C 40 30 20 -1.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitances -1.0 Figure 10. Current-Gain -- Bandwidth Product +0.5 T J = 25C -0.8 V BE(sat) @ I C /I B = 10 0 R VC for V CE(sat) COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) -0.6 V BE(on) @ V CE = -10 V -0.5 - 1.0 - 0.4 -1.5 -0.2 -2.0 R VB for V BE V CE(sat) @ I C /I B = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients O8-4/4 |
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